|
|
IRFZ14SのメーカーはInternational Rectifierです、この部品の機能は「Advanced Process Technology / Surface Mount」です。 |
部品番号 | IRFZ14S |
| |
部品説明 | Advanced Process Technology / Surface Mount | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFZ14Sダウンロード(pdfファイル)リンクがあります。 Total 10 pages
www.DataSheet4U.com
l Advanced Process Technology
l Surface Mount (IRFZ14S)
l Low-profile through-hole (IRFZ14L)
l 175°C Operating Temperature
l Fast Switching
G
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ14L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 9.890A
IRFZ14S/L
HEXFET® Power MOSFET
D VDSS = 60V
RDS(on) = 0.20Ω
ID = 10A
S
D 2 Pak
T O -262
Max.
10
7.2
40
3.7
43
0.29
± 20
47
4.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
V/ns
°C
°C
Typ.
–––
–––
Max.
3.5
40
Units
°C/W
8/25/97
1 Page IRFZ14S/L
TJ
Fig 1. Typical Output Characteristics
TJ
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3Pages IRFZ14S/L
VDS
RG
10 V
tp
L
D.U.T.
IAS
0.01Ω
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 Page | |||
ページ | 合計 : 10 ページ | ||
|
PDF ダウンロード | [ IRFZ14S データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRFZ14 | Power MOSFET ( Transistor ) | Fairchild Semiconductor |
IRFZ14 | HEXFET Power MOSFET | International Rectifier |
IRFZ14 | (IRFZ10 / IRFZ14) N-Channel Power MOSFET | Samsung Electronics |
IRFZ14 | Power MOSFET ( Transistor ) | Vishay |