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Número de pieza | IRHQ8214 | |
Descripción | (IRHQx214) RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
Fabricantes | International Rectifier | |
Logotipo | ||
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PD - 93828A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level
IRHQ7214 100K Rads (Si)
IRHQ3214 300K Rads (Si)
IRHQ4214 600K Rads (Si)
IRHQ8214 1000K Rads (Si)
RDS(on)
2.25Ω
2.25Ω
2.25Ω
2.25Ω
ID
1.6A
1.6A
1.6A
1.6A
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite ap-
plications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The com-
bination of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC to DC
converters and motor control. These devices retain all of
the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings ( Per Die)
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
IRHQ7214
250V, QUAD N-CHANNEL
RAD-Hard™ HEXFET®
MOSFET TECHNOLOGY
LCC-28
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
1.6
1.0
6.4
12
0.1
±20
62
1.6
1.2
3.5
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
300 (for 5s)
0.89 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
04/22/03
1 page Pre-Irradiation
IRHQ7214
600
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
500
Crss = Cgd
Coss = Cds + Cgd
400
300
200
100
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 1.6A
16
12
VDS = 200V
VDS = 125V
VDS = 50V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 4 8 12 16 20
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1
0.1
0.4
TJ = 25° C
VGS = 0 V
0.6 0.8 1.0 1.2
VSD,Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
10us
100us
1
1ms
TC= 25°C
TJ = 150 ° C
Single Pulse
0.1
10
10ms
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRHQ8214.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRHQ8214 | (IRHQx214) RADIATION HARDENED POWER MOSFET SURFACE MOUNT | International Rectifier |
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