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IRHQ3110 の電気的特性と機能

IRHQ3110のメーカーはInternational Rectifierです、この部品の機能は「(IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHQ3110
部品説明 (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHQ3110 Datasheet, IRHQ3110 PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 93785A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level
IRHQ7110 100K Rads (Si)
IRHQ3110 300K Rads (Si)
IRHQ4110 600K Rads (Si)
IRHQ8110 1000K Rads (Si)
RDS(on)
0.6
0.6
0.6
0.75
ID
3.0A
3.0A
3.0A
3.0A
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices re-
tain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of parallel-
ing and temperature stability of electrical parameters.
Absolute Maximum Ratings (Per Die)
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
IRHQ7110
100V, QUAD N-CHANNEL
RAD-HardHEXFET®
MOSFETTECHNOLOGY
LCC-28
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
3.0
1.9 A
12
12 W
0.1 W/°C
±20 V
85 mJ
3.0 A
1.2 mJ
3.0
-55 to 150
V/ns
oC
300 (for 5s)
0.89 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
12/27/00

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IRHQ3110 pdf, ピン配列
Radiation Characteristics
IRHQ7110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ (Per Die)
Parameter
100KRads(Si)1 300K to 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (LCC-28)
Diode Forward Voltage
100 —
2.0 4.0
— 100
— -100
— 25
— 0.556
— 0.60
— 1.2
100
1.25
4.5
100
-100
25
0.706
V
nA
µA
0.75
1.2 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 80V, VGS =0V
VGS = 12V, ID = 1.9A
VGS = 12V, ID = 1.9A
VGS = 0V, IS = 3.0A
1. Part numbers IRHQ7110, IRHQ3110, IRHQ4110
2. Part number IRHQ8110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion LET
MeV/(mg/cm2))
Cu 28.0
Br 36.8
I 59.8
Energy
(MeV)
285
305
343
Range
(µm) @VGS=0V @VGS=-5V
43.0 100
100
39.0 100
80
32.6 50
40
VDS (V)
@VGS=-10V
100
70
35
@VGS=-15V
100
50
@VGS=-20V
70
120
100
80
60
40
20
0
0
-5 -10 -15 -20 -25
VGS
Cu
Br
I
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHQ3110 電子部品, 半導体
IRHQ7110
Pre-Irradiation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
1
0.05
0.02
0.01
0.1
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRHQ3110

(IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

International Rectifier
International Rectifier


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