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PDF IRHQ57214SE Data sheet ( Hoja de datos )
| Número de pieza | IRHQ57214SE | |
| Descripción | RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
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PD-93881C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level
IRHQ57214SE 100K Rads (Si)
RDS(on)
1.5Ω
ID
1.9A
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects(SEE) with useful
performance up to an LET of 80 (MeV/(mg/cm2)). The
combination of low RDS(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control.
These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature
stability of electrical parameters.
Absolute Maximum Ratings (Per Die)
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
IRHQ57214SE
250V, QUAD N-CHANNEL
5 TECHNOLOGY
LCC-28
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
1.9
1.2
7.6
12
0.1
±20
30
1.9
1.2
9.9
-55 to 150
300 (for 5s)
0.89 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
05/19/05
1 page  
Pre-Irradiation
IRHQ57214SE
600 VGS = 0V, f = 1MHz
500
CCCirossssss
=
=
=
CCCggdsds
+
+
Cgd
Cgd
,
Cds
SHORTED
400 Ciss
300
Coss
200
100
0
1
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 1.9A
16
VVVDDDSSS
=
=
=
200V
125V
50V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 4 8 12 16
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
TJ = 150° C
1
TJ = 25° C
0.1
0.2
VGS = 0 V
0.6 0.9 1.3
VSD ,Source-to-Drain Voltage (V)
1.6
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
10us
100us
1
1ms
TC
TJ
=
=
25 °C
150 °C
Single Pulse
0.1
1
10
10ms
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHQ57214SE.PDF ] | |
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