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PDF IXTA3N50P Data sheet ( Hoja de datos )
| Número de pieza | IXTA3N50P | |
| Descripción | (IXTx3N50P) PolarHV Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 3N50P
IXTP 3N50P
IXTY 3N50P
VDSS
ID25
RDS(on)
= 500
= 3.6
≤ 2.0
V
A
Ω
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 20 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-220)
TO-220
TO-263
TO-252
Maximum Ratings
500 V
500 V
±30 V
±40 V
3.6 A
8A
3A
10 mJ
180 mJ
10 V/ns
70 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 ° C
1.13/10 Nm/lb.in.
4g
3g
0.8 g
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 50µA
3.0 5.5 V
IGSS VGS = ± 30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
5 µA
50 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
2.0 Ω
TO-220 (IXTP)
G DS
TO-263 (IXTA)
(TAB)
GS
TO-252 (IXTY)
(TAB)
G
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
l International standard packages
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99200E(12/05)
1 page  
IXTA 3N50P IXTP 3N50P
IXTY 3N50P
Fig. 13. Maximum Transient Thermal Resistance
10.0
1.0
0.1
0.1
1 10 100
Pulse Width - milliseconds
1000
© 2006 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTA3N50P.PDF ] | |
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