DataSheet.jp

IXTP3N110 の電気的特性と機能

IXTP3N110のメーカーはIXYS Corporationです、この部品の機能は「(IXTx3N1x0) High Voltage Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTP3N110
部品説明 (IXTx3N1x0) High Voltage Power MOSFETs
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




このページの下部にプレビューとIXTP3N110ダウンロード(pdfファイル)リンクがあります。

Total 4 pages

No Preview Available !

IXTP3N110 Datasheet, IXTP3N110 PDF,ピン配置, 機能
www.DataSheet4U.com
High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary Data Sheet
IXTA/IXTP 3N120
IXTA/IXTP 3N110
VDSS
1200 V
1100 V
ID25
3A
3A
RDS(on)
4.5
4.0
Symbol
V
DSS
VDGR
VGS
VGSM
ID25
IDM
I
AR
EAR
E
AS
dv/dt
P
D
T
J
T
JM
Tstg
TL
M
d
Weight
Test Conditions
Maximum Ratings
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
3N120
3N110
3N120
3N110
1200
1100
1200
1100
V
V
V
V
Continuous
Transient
±20 V
±30 V
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
3A
12 A
3A
20 mJ
700 mJ
I
S
I,
DM
di/dt
100
A/µs,
V
DD
V,
DSS
TJ 150°C, RG = 2
T
C
= 25°C
5
150
-55 to +150
150
-55 to +150
V/ns
W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300 °C
Mounting torque (TO-220)
1.13/10 Nm/lb.in.
TO-220
TO-263
4g
2g
TO-220 (IXTP)
GDS
TO-263 (IXTA)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l International standard packages
l Low R
DS (on)
l Rated for unclamped Inductive load
Switching (UIS)
l Molding epoxies meet UL 94 V-0
flammability classification
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3N120
3N110
1200
1100
2.5
V
V
4.5 V
±100 nA
TJ = 25°C
TJ = 125°C
3N120
3N110
25 µA
1 mA
4.5
4.0
Advantages
l Easy to mount
l Space savings
l High power density
© 2001 IXYS All rights reserved
98844A (11/01)

1 Page





IXTP3N110 pdf, ピン配列
5
TJ = 25OC
VGS = 9V
8V
4 7V
6V
3
5V
2
1 4V
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
Fig.1 Output Characteristics @ Tj = 25°C
2.50
2.25
2.00
VGS = 10V
TJ = 125OC
1.75
1.50
1.25
1.00
0.75
01234
ID - Amperes
Fig. 3 RDS(on) vs. Drain Current
5 TJ = 25OC
4.0
IXT_3N110
3.5
IXT_3N120
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
Fig.5 Drain Current vs. Case Temperature
© 2001 IXYS All rights reserved
IXTA/IXTP 3N120
IXTA/IXTP 3N110
4.0
3.5 TJ = 125OC VGS = 9V
8V
3.0
7V
6V
2.5
2.0
1.5 5V
1.0
0.5
4V
0.0
0 3 6 9 12 15 18 21 24 27 30
VDS - Volts
Fig. 2 Output Characteristics @ Tj = 125°C
2.8
VGS = 10V
2.5
2.2
ID = 3A
1.9
1.6
ID =1.5A
1.3
1.0
25 50 75 100 125 150
TJ - Degrees C
Fig.4 Temperature Dependence of Drain
to Source Resistance
3.0
2.5
2.0
1.5
TJ = 125oC
1.0
TJ = 25oC
0.5
0.0
3.5 4.0 4.5 5.0 5.5 6.0
VGS - Volts
Fig. 6 Drain Current vs Gate Source Voltage


3Pages





ページ 合計 : 4 ページ
 
PDF
ダウンロード
[ IXTP3N110 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IXTP3N110

(IXTx3N1x0) High Voltage Power MOSFETs

IXYS Corporation
IXYS Corporation


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap