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PDF IXTA3N120 Data sheet ( Hoja de datos )
| Número de pieza | IXTA3N120 | |
| Descripción | (IXTx3N1x0) High Voltage Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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High Voltage
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary Data Sheet
IXTA/IXTP 3N120
IXTA/IXTP 3N110
VDSS
1200 V
1100 V
ID25
3A
3A
RDS(on)
4.5 Ω
4.0 Ω
Symbol
V
DSS
VDGR
VGS
VGSM
ID25
IDM
I
AR
EAR
E
AS
dv/dt
P
D
T
J
T
JM
Tstg
TL
M
d
Weight
Test Conditions
Maximum Ratings
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
3N120
3N110
3N120
3N110
1200
1100
1200
1100
V
V
V
V
Continuous
Transient
±20 V
±30 V
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
3A
12 A
3A
20 mJ
700 mJ
I
S
≤
I,
DM
di/dt
≤
100
A/µs,
V
DD
≤
V,
DSS
TJ ≤ 150°C, RG = 2 Ω
T
C
= 25°C
5
150
-55 to +150
150
-55 to +150
V/ns
W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300 °C
Mounting torque (TO-220)
1.13/10 Nm/lb.in.
TO-220
TO-263
4g
2g
TO-220 (IXTP)
GDS
TO-263 (IXTA)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l International standard packages
l Low R
DS (on)
l Rated for unclamped Inductive load
Switching (UIS)
l Molding epoxies meet UL 94 V-0
flammability classification
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3N120
3N110
1200
1100
2.5
V
V
4.5 V
±100 nA
TJ = 25°C
TJ = 125°C
3N120
3N110
25 µA
1 mA
4.5 Ω
4.0 Ω
Advantages
l Easy to mount
l Space savings
l High power density
© 2001 IXYS All rights reserved
98844A (11/01)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTA3N120.PDF ] | |
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