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PDF IXGH60N60B2 Data sheet ( Hoja de datos )
| Número de pieza | IXGH60N60B2 | |
| Descripción | IGBT | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 kHz hard
switching and up to 100 KHz
resonant switching
IXGH 60N60B2
IXGT 60N60B2
VCES
IC25
VCE(sat)
tfi typ
= 600 V
= 75 A
< 1.8 V
= 100 ns
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
ICM TC = 25°C, 1 ms
SSOA
(RBSOA)
PC
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600 V
TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md Mounting torque (M3)
Weight
TO-247 AD
TO-268 SMD
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
60 A
300 A
ICM = 150
A
500
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 50 A, VGE = 15 V
Note 1.
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.0 5.0 V
TJ = 25°C
TJ = 150°C
TJ = 25°C
50 µA
1 mA
±100 nA
1.8 V
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z Medium frequency IGBT
z Square RBSOA
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
© 2003 IXYS All rights reserved
DS99113(11/03)
1 page  
Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Tem perature
350
300
250
td(off)
tfi - - - - - -
RG = 3.3Ω
VGE = 15V
VCE = 400V
IC = 25A
50A
100A
200
150
IC = 100A
50A
100 25A
50
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
10000
1000
Fig. 15. Capacitance
f = 1 MHz
Cies
Coes
100
Cres
IXGH 60N60B2
IXGT 60N60B2
Fig. 14. Gate Charge
15
VCE = 300V
IC = 50A
12 IG = 10mA
9
6
3
0
0 20 40 60 80 100 120 140 160 180
Q G - nanoCoulombs
10
0
5 10 15 20 25 30 35 40
VC E - Volts
0.275
0.25
0.225
0.2
0.175
0.15
0.125
0.1
0.075
0.05
1
© 2003 IXYS All rights reserved
Fig. 16. Maxim um Transient Therm al Resistance
10
Pulse Width - milliseconds
100
1000
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| PDF Descargar | [ Datasheet IXGH60N60B2.PDF ] | |
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