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Datasheet IXGH60N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IXGH60N60 | (IXGH60N50 / IXGH60N60) HIGH CURRENT MOSIGBT |  IXYS Corporation | igbt |
| 2 | IXGH60N60 | Ultra-Low VCE(sat) IGBT Ultra-Low VCE(sat) IGBT
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IXGH 60N60 IXGK 60N60 IXGT 60N60
VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, li | IXYS Corporation | igbt |
| 3 | IXGH60N60B2 | IGBT, Insulated Gate Bipolar Transistor
Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching
IXGH 60N60B2 IXGT 60N60B2
VCES IC25 VCE(sat) tfi typ
= 600 V = 75 A < 1.8 V = 100 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Te | IXYS Corporation | igbt |
| 4 | IXGH60N60C2 | HiPerFASTTM IGBT C2-Class High Speed IGBTs
Advance Technical Data
HiPerFASTTM IGBT
C2-Class High Speed IGBTs
IXGH 60N60C2 IXGT 60N60C2
VCES IC25 VCE(sat) tfi typ
= 600 V = 75 A = 2.5 V = 35 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 1 | IXYS Corporation | igbt |
| 5 | IXGH60N60C3 | High Speed PT IGBT GenX3TM 600V IGBT
High Speed PT IGBT for 40-100kHz Switching
IXGH60N60C3
VCES IC110 VCE(sat) tfi (typ)
= = ≤ =
600V 60A 2.5V 50ns
TO-247 AD Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) | IXYS Corporation | igbt |
IXG Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IXGA10N60 | (IXGx10N60x) High speed IGBT
Preliminary data
Low VCE(sat) IGBT High speed IGBT
VCES IXGA/IXGP/IXGH10N60 600 V IXGA/IXGP/IXGH10N60A 600 V
IC25 20 A 20 A
VCE(sat) 2.5 V 3.0 V
TO-220AB(IXGP)
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25 °C to 150°C TJ IXYS Corporation igbt | | |
| 2 | IXGA10N60A | (IXGx10N60x) High speed IGBT
Preliminary data
Low VCE(sat) IGBT High speed IGBT
VCES IXGA/IXGP/IXGH10N60 600 V IXGA/IXGP/IXGH10N60A 600 V
IC25 20 A 20 A
VCE(sat) 2.5 V 3.0 V
TO-220AB(IXGP)
Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25 °C to 150°C TJ IXYS Corporation igbt | | |
| 3 | IXGA12N100 | (IXGx12N100x) IGBT
IGBT
VCES
IC25 24 A 24 A
VCE(sat) 3.5 V 4.0 V
IXGA/IXGP12N100 1000 V IXGA/IXGP12N100A 1000 V
Preliminary Data Sheet
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continu IXYS Corporation igbt | | |
| 4 | IXGA12N100A | (IXGx12N100x) IGBT
IGBT
VCES
IC25 24 A 24 A
VCE(sat) 3.5 V 4.0 V
IXGA/IXGP12N100 1000 V IXGA/IXGP12N100A 1000 V
Preliminary Data Sheet
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continu IXYS Corporation igbt | | |
| 5 | IXGA12N100AU1 | (IXGx12N100xU1) IGBT - Combi Pack
IGBT
Combi Pack
Preliminary Data Sheet
VCES IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 1000 V 1000 V
IC25 24 A 24 A
VCE(sat) 3.5 V 4.0 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = IXYS Corporation igbt | | |
| 6 | IXGA12N100U1 | (IXGx12N100xU1) IGBT - Combi Pack
IGBT
Combi Pack
Preliminary Data Sheet
VCES IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 1000 V 1000 V
IC25 24 A 24 A
VCE(sat) 3.5 V 4.0 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = IXYS Corporation igbt | | |
| 7 | IXGA12N120A2 | IGBT Optimized IGBT
Optimized for switching up to 5KHz
Preliminary data sheet
IXGA 12N120A2 IXGP 12N120A2
VCES = 1200 V = 24 A IC25 VCE(sat) = 3.0 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient IXYS Corporation igbt | |
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