DataSheet.jp

IRFE310 の電気的特性と機能

IRFE310のメーカーはInternational Rectifierです、この部品の機能は「HEXFET TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFE310
部品説明 HEXFET TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRFE310ダウンロード(pdfファイル)リンクがあります。

Total 7 pages

No Preview Available !

IRFE310 Datasheet, IRFE310 PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 91782
IRFE310
REPETITIVE AVALANCHE AND dv/dt RATED
JANTX2N6786U
HEXFET® TRANSISTOR
JANTXV2N6786U
[REF:MIL-PRF-19500/556]
N-CHANNEL
400Volt, 3.6, HEXFET
The leadless chip carrier (LCC) package represents
the logical next step in the continual evolution of
surface mount technology. The LCC provides
designers the extra flexibility they need to increase
circuit board density. International Rectifier has
engineered the LCC package to meet the specific
needs of the power market by increasing the size of
the bottom source pad, thereby enhancing the thermal
and electrical performance. The lid of the package
is grounded to the source to reduce RF interference.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits,
and virtually any application where high reliability
is required.
Product Summary
Part Number
BVDSS
IRFE310
400V
RDS(on)
3.6
ID
1.25A
Features:
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n Small footprint
n Surface Mount
n Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current 
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy ‚
dv/dt
Peak Diode Recovery dv/dt ƒ
TJ Operating Junction
TSTG
Storage Temperature Range
Surface Temperature
Weight
www.irf.com
IRFE310, JANTX-, JANTXV-, 2N6786U Units
1.25
0.80 A
5.5
15 W
0.12
W/°C
±20 V
34 mJ
2.8 V/ns
-55 to 150
oC
300 ( for 5 seconds)
0.42 (typical)
g
1
10/9/98

1 Page





IRFE310 pdf, ピン配列
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
4.5V
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
0.1
4.5V
0.01
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
0.01
0.1
20µs PULSE WIDTH
TJ = 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
10
1 TJ = 150° C
TJ = 25° C
0.1
4.0
V DS = 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 1.2A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRFE310 電子部品, 半導体
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
15V
VDS
L
D R IV E R
RG
120VV
tp
D.U .T
IA S
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
75
ID
TOP
0.56A
0.79A
60 BOTTOM 1.25A
45
30
15
0
25 50 75 100 125 150
Starting TJ , Junction Temperature( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
102VV .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



ページ 合計 : 7 ページ
 
PDF
ダウンロード
[ IRFE310 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRFE310

HEXFET TRANSISTOR

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap