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PDF IXFE23N100 Data sheet ( Hoja de datos )
| Número de pieza | IXFE23N100 | |
| Descripción | (IXFE23N100 / IXFE24N100) Single MOSFET Die | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM
Power MOSFET
Single MOSFET Die
IXFE 24N100
IXFE 23N100
VDSS
ID25
1000 V 22 A
1000 V 21 A
trr ≤ 250 ns
RDS(on)
0.39 Ω
0.43 Ω
Preliminary data sheet
Symbol Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
IDM TC = 25°C; Note 1
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
24N100
23N100
24N100
23N100
1000
1000
V
V
±20 V
±30 V
22 A
21 A
96 A
92 A
24 A
60 mJ
3J
5 V/ns
500 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
19 g
Symbol Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VGS = 0V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10V, ID = IT
Note 2
Characteristic Values
Min. Typ. Max.
1000
V
3.0 5.0 V
±200 nA
TJ = 25°C
TJ = 125°C
23N100
24N100
100 µA
2 mA
0.43 Ω
0.39 Ω
ISOPLUS 227TM (IXFE)
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Conforms to SOT-227B outline
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Low cost
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
98896 (1/02)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFE23N100.PDF ] | |
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