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PDF IXFE180N10 Data sheet ( Hoja de datos )
| Número de pieza | IXFE180N10 | |
| Descripción | HiPerFET-TM Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFET
Single Die MOSFET
IXFE 180N10
VDSS
ID25
RDS(on)
= 100 V
= 176 A
= 8 mΩ
trr ≤ 250 ns
Preliminary data sheet
Symbol Test Conditions
VDSS
V
DGR
VGS
VGSM
ID25
IL(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
VISOL
M
d
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C,
R
GS
=
1MΩ
Continuous
Transient
TC = 25°C
Terminal (current limit)
TC = 25°C; Note 1
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
100 V
100 V
±20 V
±30 V
176 A
100 A
720 A
180 A
60 mJ
3J
5 V/ns
500 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
2500
3000
V~
V~
1.5/13Nm/lb.in.
1.5/13Nm/lb.in.
19 g
Symbol Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
Characteristic Values
Min. Typ. Max.
VDSS
VGS= 0 V, ID = 3mA
100
V
VGS(th) VDS = VGS, ID = 8mA
2 4V
IGSS VGS= ±20V, VGS = 0V
±100 nA
IDSS
VDS= VDSS
VGS= 0 V
TJ = 25°C
TJ = 125°C
100 µA
2 mA
RDS(on)
VGS = 10V, ID = IT
Note 2
8 mΩ
ISOPLUS 227TM (IXFE)
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Conforms to SOT-227B outline
•Encapsulating epoxy meets
UL 94 V-0, flammability classification
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
98902 (2/02)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFE180N10.PDF ] | |
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