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PDF FDZ191P Data sheet ( Hoja de datos )
| Número de pieza | FDZ191P | |
| Descripción | P-Channel 1.5V PowerTrench WL-CSP MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
October 2006
FDZ191P
P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET
tm
-20V, -1A, 85mΩ
Features
General Description
Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A
Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A
Max rDS(on) = 200mΩ at VGS = -1.5V, ID = -1A
Occupies only 1.5 mm2 of PCB area Less than 50% of the
area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
RoHS Compliant
Designed on Fairchild's advanced 1.5V PowerTrench process
with state of the art "low pitch" WLCSP packaging process, the
FDZ191P minimizes both PCB space and rDS(on). This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge, and low rDS(on). .
Application
Battery management
Load switch
Battery protection
S
S
D
S
D
PIN 1
G
BOTTOM
TOP
S
G
D
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
TA = 25°C
PD
TJ, TSTG
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-3
-15
1.5
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
83
140
°C/W
Device Marking
1
Device
FDZ191P
Package
WL-CSP
Reel Size
7’’
Tape Width
8mm
Quantity
5000 units
©2006 Fairchild Semiconductor Corporation
FDZ191P Rev.F (W)
1
www.fairchildsemi.com
1 page  
www.DataSheet4U.com
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
10-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
102
103
FDZ191P Rev.F (W)
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDZ191P.PDF ] | |
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