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PDF IXSX50N60AU1 Data sheet ( Hoja de datos )
| Número de pieza | IXSX50N60AU1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS Corporation | |
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Preliminary data
IGBT with Diode
Combi Pack
Short Circuit SOA Capability
IXSX50N60AU1
IXSX50N60AU1S
VCES = 600 V
I = 75 A
C25
VCE(sat) = 2.7 V
TO-247 Hole-less SMD
(50N60AU1S)
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
I
C25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
T
C
= 25°C, limited by leads
TC = 90°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 22 Ω
Clamped inductive load, L = 30 µH
tSC
(SCSOA)
PC
TJ
TJM
Tstg
Weight
VGE = 15 V, VCE = 360 V, TJ = 125°C
R
G
=
22
Ω,
non
repetitive
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
600
±20
±30
75
50
200
ICM = 100
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
µs
300
-55 ... +150
150
-55 ... +150
6
300
W
°C
°C
°C
g
°C
G
E
TO-247 Hole-less
(50N60AU1)
C (TAB)
G
C
E
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
l Hole-less TO-247 package for clip
mounting
l High current rating
l Guaranteed Short Circuit SOA
capability
l High frequency IGBT and anti-
parallel FRED in one package
l Low V
CE(sat)
- for minimum on-state conduction
losses
l MOS Gate turn-on
- drive simplicity
l Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
Symbol
BVCES
VGE(th)
I
CES
IGES
VCE(sat)
Test Conditions
IC = 3 mA, VGE = 0 V
IC = 4 mA, VCE = VGE
V = 0.8 • V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
T
J
=
25°C
TJ = 125°C
600
4
V
8V
750 µA
15 mA
±100 nA
2.7 V
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l Space savings (two devices in one
package)
l High power density
© 1997 IXYS All rights reserved
97512 (5/97)
1 page  
IXSX50N60AU1 IXSX50N60AU1S
Fig.12 Typical Forward Voltage Drop
180
160
140
120
100
80
60
40
20
0
0.5
TJ = 100°C
TJ = 150°C
TJ = 25°C
1.0 1.5 2.0
Voltage Drop - Volts
2.5
Fig.14 Junction Temperature Dependence
off I and Q
1.4 RM r
1.2
1.0
0.8
IRM
0.6
0.4 Qr
0.2
0.0
0
40 80 120 160
TJ - Degrees C
Fig.16 Peak Reverse Recovery Current
80
TJ = 100°C
VR = 350V
60 IF = 60A
40
max
20
0
200 400 600 800 1000
diF /dt - A/µs
© 1997 IXYS All rights reserved
Fig.13 Peak Forward Voltage VFR and
20 Forward Recovery Time tfr 1000
TJ = 125°C
IF = 60A
VFR
16 800
12 600
8 400
4 200
tfr
00
0 200 400 600 800 1000 1200
diF /dt - A/µs
Fig.15 Reverse Recovery Chargee
5
TJ = 100°C
VR = 350V
4 IF = 60A
3
2
1
0
1 10 100 1000
diF /dt - A/µs
Fig.17 Reverse Recovery Time
800
TJ = 100°C
VR = 350V
600 IF = 60A
400
200
0
0 200 400 600
diF /dt - A/µs
5 Page | ||
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| PDF Descargar | [ Datasheet IXSX50N60AU1.PDF ] | |
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