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PDF IXKN75N60C Data sheet ( Hoja de datos )
| Número de pieza | IXKN75N60C | |
| Descripción | CoolMOS Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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CoolMOS Power MOSFET
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
IXKN 75N60C
VDSS
600 V
ID25
75 A
RDS(on)
35 mΩ
Preliminary
MOSFET
Symbol
VDSS
VGS
ID25
ID90
dv/dt
EAS
EAR
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VDS < VDSS; IF ≤ 100A;diF/dt≤ 200A/µs
TVJ = 150°C
ID = 10 A; L = 36 mH; TC = 25°C
ID = 20 A; L = 5 µH; TC = 25°C
Maximum Ratings
600 V
±20 V
75 A
50 A
6 V/ns
1.8 J
1 mJ
miniBLOC, SOT-227 B
E72873
S
G
S
D
G = Gate
S = Source
D = Drain
Either source terminal at miniBLOC can be used
as main or kelvin source
Symbol
RDSon
VGSth
IDSS
IGSS
Qg
Q
gs
Qgd
td(on)
t
r
td(off)
t
f
VF
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = ID90
V
DS
=
20
V;
ID
=
5
mA;
VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
VGS = ±20 V; VDS = 0 V
V = 10 V; V = 350 V; I = 100 A
GS DS
D
30 35 mΩ
3.5 5.5 V
0.05 mA
0.1 mA
200 nA
440 nC
112 nC
246 nC
VGS= 10 V; VDS = 380 V;
I
D
=
50
A;
R
G
=
1
Ω
30 ns
95 ns
100 ns
10 ns
(reverse
conduction)
I
F
=
37.5
A;
VGS
=
0
V
0.9 1.1 V
0.22 K/W
Features
● miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation due to AlN
ceramic substrate
- International standard package SOT-227
- Easy screw assembly
● fast CoolMOS power MOSFET - 2nd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
● Enhanced total power density
Applications
● Switched mode power supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Power factor correction (PFC)
● Welding
● Inductive heating
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
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