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IXKN75N60C PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXKN75N60C
部品説明 CoolMOS Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXKN75N60C Datasheet, IXKN75N60C PDF,ピン配置, 機能
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CoolMOS Power MOSFET
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
IXKN 75N60C
VDSS
600 V
ID25
75 A
RDS(on)
35 m
Preliminary
MOSFET
Symbol
VDSS
VGS
ID25
ID90
dv/dt
EAS
EAR
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VDS < VDSS; IF 100A;diF/dt≤ 200A/µs
TVJ = 150°C
ID = 10 A; L = 36 mH; TC = 25°C
ID = 20 A; L = 5 µH; TC = 25°C
Maximum Ratings
600 V
±20 V
75 A
50 A
6 V/ns
1.8 J
1 mJ
miniBLOC, SOT-227 B
E72873
S
G
S
D
G = Gate
S = Source
D = Drain
Either source terminal at miniBLOC can be used
as main or kelvin source
Symbol
RDSon
VGSth
IDSS
IGSS
Qg
Q
gs
Qgd
td(on)
t
r
td(off)
t
f
VF
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = ID90
V
DS
=
20
V;
ID
=
5
mA;
VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
VGS = ±20 V; VDS = 0 V
V = 10 V; V = 350 V; I = 100 A
GS DS
D
30 35 m
3.5 5.5 V
0.05 mA
0.1 mA
200 nA
440 nC
112 nC
246 nC
VGS= 10 V; VDS = 380 V;
I
D
=
50
A;
R
G
=
1
30 ns
95 ns
100 ns
10 ns
(reverse
conduction)
I
F
=
37.5
A;
VGS
=
0
V
0.9 1.1 V
0.22 K/W
Features
miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation due to AlN
ceramic substrate
- International standard package SOT-227
- Easy screw assembly
fast CoolMOS power MOSFET - 2nd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
Enhanced total power density
Applications
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
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