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IXKN45N80C PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXKN45N80C
部品説明 CoolMOS Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXKN45N80C Datasheet, IXKN45N80C PDF,ピン配置, 機能
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Advanced Technical Information
CoolMOS Power MOSFET
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
IXKN 45N80C
VDSS
800 V
ID25
44 A
RDS(on)
74 m
MOSFET
Symbol
VDSS
VGS
ID25
ID90
dv/dt
EAS
EAR
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VDS < VDSS; IF 17 A;diF/dt≤ 100 A/µs
TVJ = 150°C
ID = 4 A; L = 80 mH; TC = 25°C
ID = 17 A; L = 3 µH; TC = 25°C
Maximum Ratings
800 V
±20 V
44 A
30 A
6 V/ns
670 mJ
0.5 mJ
miniBLOC, SOT-227 B
E72873
S
G
S
D
G = Gate
S = Source
D = Drain
Either source terminal at miniBLOC can be used
as main or kelvin source
Symbol
RDSon
VGSth
IDSS
IGSS
Qg
Q
gs
Qgd
td(on)
t
r
td(off)
t
f
VF
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = ID90
V
DS
=
20
V;
ID
=
4
mA;
VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
VGS = ±20 V; VDS = 0 V
V = 10 V; V = 640 V; I = 70 A
GS DS
D
63 74 m
2 4V
50 µA
20 µA
400 nA
332 nC
36 nC
168 nC
VGS= 10 V; VDS = 640 V;
I
D
=
70
A;
R
G
=
1.8
25 ns
15 ns
75 ns
10 ns
(reverse
conduction)
I
F
=
37.5
A;
VGS
=
0
V
1.0 1.2 V
0.33 K/W
Features
miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- International standard package SOT-227
- Easy screw assembly
fast CoolMOS power MOSFET - 3rd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
Enhanced total power density
Applications
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
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