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PDF IXKN40N60C Data sheet ( Hoja de datos )
| Número de pieza | IXKN40N60C | |
| Descripción | CoolMOS Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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Advanced Technical Information
CoolMOS Power MOSFET
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
IXKN 40N60C
VDSS
600 V
ID25
40 A
RDS(on)
70 mW
Symbol
VDSS
VGS
ID25
ID90
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
VISOL
Md
MOSFET
Symbol
VDSS
IDSS
RDS(on)
VGS(th)
IGSS
Conditions
Maximum Ratings
TJ = 25°C to 150°C
600 V
±20 V
TC = 25°C
TC = 90°C
40
27
ID = 20 A, L = 5 µH, TVJ = 25°C, repetitive
ID = 10 A, L = 36 mH, TVJ = 25°C, non repetitive
1
1.8
VDS £ VDSS, IS = 47 A, diS/dt = 100 A/µs, TJ = TJM
6
TC = 25°C
290
-40 ... +150
150
-40 ... +150
A
A
mJ
J
V/ns
W
°C
°C
°C
50/60 Hz, RMS IISOL £ 1 mA
Mounting torque
Terminal connetion torque (M4)
2500
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Conditions
VGS = 0 V, ID = 1 mA
VDS = 0.8 • VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25
VDS = VGS, ID = 2.5 mA
VGS = ±20 VDC, VDS = 0
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600
TJ = 25°C
TJ = 125°C
0.5
50
3.5
V
25 µA
µA
70 mW
5.5 V
±100 nA
miniBLOC, SOT-227 B
E72873
S
G
S
D
G = Gate
S = Source
D = Drain
Either source terminal at miniBLOC can be used
as main or kelvin source
Features
q miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation due to AlN
ceramic substrate
- International standard package SOT-227
- Easy screw assembly
q Fast CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
q Enhanced total power density
Applications
q Switched mode power supplies (SMPS)
q Uninterruptible power supplies (UPS)
q Power factor correction (PFC)
q Welding
q Inductive heating
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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