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IXKC40N60C PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXKC40N60C
部品説明 CoolMOS Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXKC40N60C Datasheet, IXKC40N60C PDF,ピン配置, 機能
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ADVANCE TECHNICAL INFORMATION
CoolMOS Power MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low RDS(on), High Voltage,, MOSFET
IXKC 40N60C
VDSS
ID25
RDS(on)
= 600 V
= 28 A
= 96 m
Symbol
Test Conditions
Maximum Ratings ISOPLUS 220TM
VDSS
VGS
ID25
I
D90
ID(RMS)
EAS
EAR
PD
T
J
T
JM
Tstg
TL
VISOL
FC
Weight
T
J
= 25°C to 150°C
Continuous
TC = 25°C; Note 1
TC = 90°C, Note 1
Package lead current limit
Io = 10A, TC = 25°C
I = 20A
o
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
600 V
±20 V
28 A
19 A
45 A
690 mJ
1 mJ
250 W
-55 ... +150
150
-55 ... +125
°C
°C
°C
300 °C
2500
V~
11 ... 65 / 2.4 ...11 N/lb
3g
G
D
S
G = Gate,
S = Source
Isolated back surface*
D = Drain,
* Patent pending
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l 2ND generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
l Low thermal resistance due to reduced
chip thickness
l Low drain to tab capacitance(<30pF)
Symbol
RDS(on)
VGS(th)
IDSS
I
GSS
Applications
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V, ID = ID90, Note 3
VGS = 10 V, ID = ID90, Note 3 TJ = 125°C
80 96 m
230 m
l Switched Mode Power Supplies (SMPS)
l Uninterruptible Power Supplies (UPS)
l Power Factor Correction (PFC)
l Welding
l Inductive Heating
VDS = VGS, ID = 2 mA
3.5 5.5 V Advantages
VDS = VDSS
VGS = 0 V
VGS = ±20 VDC, VDS = 0
TJ = 25°C
TJ = 125°C
2 µA l Easy assembly: no screws or isolation
20 µA foils required
l Space savings
±200 nA l High power density
© 2001 IXYS All rights reserved
COOLMOS is a trademark of Infineon
Technolgy
98847 (6/01)

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