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H7N1004LD の電気的特性と機能

H7N1004LDのメーカーはRenesas Technologyです、この部品の機能は「(H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching」です。


製品の詳細 ( Datasheet PDF )

部品番号 H7N1004LD
部品説明 (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching
メーカ Renesas Technology
ロゴ Renesas Technology ロゴ 




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H7N1004LD Datasheet, H7N1004LD PDF,ピン配置, 機能
www.DataSheet4U.com
H7N1004LD, H7N1004LS, H7N1004LM
Silicon N-Channel MOSFET
High-Speed Power Switching
REJ03G0072-0600Z
(Previous ADE-208-1552E(Z))
Rev.6.00
Aug.27.2003
Features
Low on-resistance
RDS(on) = 25 mtyp.
Low drive current
Available for 4.5 V gate drive
Outline
LDPAK
D
4 44
G
S
1
2
3
1
2
3
1
2
H7N1004LS
3
H7N1004LM
H7N1004LD
1. Gate
2. Drain
3. Source
4. Drain
Rev.6.00, Aug.27.2003, page 1 of 11

1 Page





H7N1004LD pdf, ピン配列
H7N1004LD, H7N1004LS, H7N1004LM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 100
Gate to source breakdown voltage V(BR)GSS ±20
Gate to source leak current
IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage
VGS(off) 1.5
Static drain to source on state
RDS(on)
resistance
Forward transfer admittance
|yfs| 22
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
td(on) —
Rise time
tr —
Turn-off delay time
td(off) —
Fall time
tf —
Body-drain diode forward voltage VDF
Body-drain diode reverse recovery trr
time
Notes: 1. Pulse test
Typ
25
30
37
2800
240
140
50
9
11
23
120
70
9.5
0.9
47
Max
±10
10
2.5
35
45
Unit
V
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 100 V, VGS = 0
ID = 1 mA, VDS = 10 V Note 1
ID = 15 A, VGS = 10 V Note 1
ID = 15 A, VGS = 4.5 V Note 1
ID = 15 A, VGS = 10 V Note 1
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 50 V
VGS = 10 V
ID = 30 A
VGS = 10 V, ID = 15 A
RL = 2
Rg = 4.7
IF = 30 A, VGS = 0
IF = 30 A, VGS = 0
diF/dt = 100 A/µs
Rev.6.00, Aug.27.2003, page 3 of 11


3Pages


H7N1004LD 電子部品, 半導体
H7N1004LD, H7N1004LS, H7N1004LM
Body-Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I DR (A)
10000
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200 Coss
100
50 Crss
20 VGS = 0
f = 1 MHz
10
0 10 20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
200
VDD = 25 V
50 V
160 100 V
VGS
I D= 30 A
120
20
16
12
80 8
40
VDD = 100 V
4
50 V
25 V
VDS 0
0 20 40 60 80 100
Gate Charge Qg (nC)
1000
Switching Characteristics
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty 1%
tr
RG = 4.7
100 t d(off)
t d(on)
10 t f
1
0.1 0.3 1 3
10 30
Drain Current I D (A)
100
Rev.6.00, Aug.27.2003, page 6 of 11

6 Page



ページ 合計 : 12 ページ
 
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共有リンク

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部品番号部品説明メーカ
H7N1004LD

(H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching

Renesas Technology
Renesas Technology
H7N1004LM

(H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching

Renesas Technology
Renesas Technology
H7N1004LS

(H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching

Renesas Technology
Renesas Technology


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