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Datasheet STYNXXX Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | STYNxxx | Discrete Thyristors
STYN210(S) thru STYN1010(S)
Discrete Thyristors(SCRs)
Dimensions TO-220AB
Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0 |  Sirectifier | thyristor |
| 2 | STYNxxxS | Discrete Thyristors
STYN210(S) thru STYN1010(S)
Discrete Thyristors(SCRs)
Dimensions TO-220AB
Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0 | Sirectifier | thyristor |
STY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | STY100NM60N | N-CHANNEL Power MOSFET STY100NM60N
Features
N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II Power MOSFET in a Max247 package
Datasheet — production data
Type STY100NM60N
VDSS @ TJmax
650 V
RDS(on) max < 0.029 Ω
ID 98 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resis  STMicroelectronics mosfet | | |
| 2 | STY100NS20FD | N-CHANNEL Power MOSFET N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY™ Power MOSFET
TYPE STY100NS20FD
n n n n n n n
STY100NS20FD
VDSS 200V
RDS(on) < 0.024Ω
ID 100 A
TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING LOW  ST Microelectronics mosfet | | |
| 3 | STY130NF20D | N-channel Power MOSFET STY130NF20D
N-channel 200 V, 0.01 Ω typ., 130 A STripFET™ II with fast recovery diode Power MOSFET in a Max247 package
Datasheet - production data
Features
Max247
3 2 1
Figure 1. Internal schematic diagram
Order code
VDS
RDS(on) max.
ID PTOT
STY130NF20D 200 V 0.012 Ω 130 A 450 W
• E STMicroelectronics mosfet | | |
| 4 | STY140NS10 | N-CHANNEL Power MOSFET N-CHANNEL 100V - 0.009 Ω - 140A MAX247™ MESH OVERLAY™ POWER MOSFET
TYPE STY140NS10
s s s
STY140NS10
VDSS 100V
RDS(on) <0.011Ω
ID 140A
TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelec ST Microelectronics mosfet | | |
| 5 | STY15NA100 | N-CHANNEL Power MOSFET STY15NA100
N - CHANNEL 1000V - 0.65 Ω - 15A - Max247 MOSFET
PRELIMINARY DATA TYPE STY15NA100
s s
V DSS 1000 V
R DS(on) < 0.77 Ω
ID 15 A
s s s s s s
TYPICAL RDS(on) = 0.65 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW IN ST Microelectronics mosfet | | |
| 6 | STY16NA90 | N-CHANNEL Power MOSFET ®
STY16NA90
N - CHANNEL 900V - 0.5 Ω - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
PRELIMINARY DATA TYPE STY16NA90
s s
V DSS 900 V
R DS(on) < 0.54 Ω
ID 16 A
s s s s s s
TYPICAL RDS(on) = 0.5 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING REP ST Microelectronics mosfet | | |
| 7 | STY25NA60 | N-CHANNEL Power MOSFET ®
STY25NA60
N - CHANNEL 600V - 0.225Ω - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET
TYPE STY25NA60
s s
V DSS 600 V
R DS(on) < 0.24 Ω
ID 25 A
s s s s s
TYPICAL RDS(on) = 0.225 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TE ST Microelectronics mosfet | |
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