|
|
PDF IRG4ZH71KD Data sheet ( Hoja de datos )
| Número de pieza | IRG4ZH71KD | |
| Descripción | Surface Mountable Short Circuit Rated UltraFast IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRG4ZH71KD (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
PD - 91729
PRELIMINARY IRG4ZH71KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor
control, tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• IGBT co-packaged with HEXFRED™ ultrafast,
ultra-soft-recovery antiparallel diodes for use in
bridge configurations
• Combines low conduction losses with high
switching speed
• Low profile low inductance SMD-10 Package
• Separated control & Power-connections for easy
paralleling
• Inherently Good coplanarity
• Easy solder inspection and cleaning
n-channel
G
E(k)
Benefits
• Highest power density and efficiency available
• HEXFRED Diodes optimized for performance with
IGBTs. Minimized recovery characteristics
• IGBTs optimized for specific application conditions
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Surface Mountable
Short Circuit Rated
UltraFast IGBT
C
VCES = 1200V
VCE(ON)typ = 2.89V
@VGE = 15V, IC = 42A
E
Max.
1200
78
42
156
156
42
156
10
± 20
350
140
-55 to +150
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.44
6.0(0.21)
Max.
0.36
0.69
–––
–––
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
www.irf.com
Units
°C/W
g (oz)
1
1 page  
IRG4ZH71KD
8000
6000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
4000
2000
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
20
VCC = 400V
I C = 42A
16
12
8
4
0
0 80 160 240 320 400
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
20
VCC = 800V
VGE = 15V
TJ = 25 ° C
IC = 42A
15
10
100 RG = 5.0 Ω
VGE = 15V
VCC = 800V
10
IC = 84 A
IC = 42 A
IC = 21 A
5
0 10 20 30 40 50
RG , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4ZH71KD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRG4ZH71KD | Surface Mountable Short Circuit Rated UltraFast IGBT | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |