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PDF IRG4ZH50KD Data sheet ( Hoja de datos )
| Número de pieza | IRG4ZH50KD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 9.1680
IRG4ZH50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH Surface Mountable Short
ULTRAFAST SOFT RECOVERY DIODE
Circuit Rated UltraFast IGBT
Features
q High short circuit rating optimized for motor control, tsc = 10µs,
VCC = 720V, TJ = 125°C, VGE = 15V
q IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft
recovery antiparallel diodes for use in bridge configurations
n-channel C
VCES = 1200V
VCE(ON)typ = 2.79V
q Combines low conduction losses with high switching speed
q Low profile low inductance SMD-10 Package
q Separated control & Power-connections for easy paralleling
G
E(k)
@VGE = 15V, IC = 29A
E
q Good coplanarity
q Easy solder inspection and cleaning
Benefits
q Highest power density and efficiency available
q HEXFRED Diodes optimized for performance with IGBTs.
Minimized recovery characteristics
q High input impedance requires low gate drive power
q Less noise and interference
SMD-10
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
tsc Short Circuit Withstand Time
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Max.
1200
54
29
108
108
16
108
10
± 20
210
83
-55 to +150
Units
V
A
µs
V
W
°C
RθJC
RθJC
RθCS
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
Min.
—
—
—
—
Typ.
—
—
0.44
6.0(0.21)
Max.
0.60
1.20
—
—
Units
°C/W
g (oz)
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
Notes:
Repetitive rating: VGE = 20V; pulse width limited by maximum
junction temperature (figure 20)
VCC = 80% (VCES), VGE = 20V, L = 10µH, RG = 5.0Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
1 www.irf.com
1 page  
IRG4ZH50KD
4000
3000
2000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
1000
Coes
Cres
0
1 10
100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCC = 400V
I C = 29A
16
12
8
4
0
0 40 80 120 160
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
200
7.0
VCC = 800V
VGE = 15V
TJ = 25 ° C
IC = 29A
6.6
6.2
5.8
100 RG = 5O.0hΩm
VGE = 15V
VCC = 800V
10
IC = 58 A
IC = 29 A
IC =14.5 A
5.4
0
10 20 30 40
RG , Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs.
Gate Resistance
50
5
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature °( C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
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| PDF Descargar | [ Datasheet IRG4ZH50KD.PDF ] | |
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