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PDF IRG4ZC70UD Data sheet ( Hoja de datos )
| Número de pieza | IRG4ZC70UD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD -9.1668A
IRG4ZC70UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
Surface Mountable
ULTRAFAST SOFT RECOVERY DIODE
UltraFast CoPack IGBT
Features
q UltraFast IGBT optimized for high switching frequencies
q IGBT co-packaged with HEXFRED™ ultrafast,
ultra-soft recovery antiparallel diodes for use in
bridge configurations
q Low gate charge
q Low profile low inductance SMD-10 package
q Separated control & Power-connections for
easy paralleling
n-channel
G
E(k)
C
E
VCES = 600V
VCE(ON)typ = 1.5V
@VGE = 15V, IC = 50A
q Inherently coplanar pins and tab
q Easy solder inspection and cleaning
Benefits
q Highest power density and efficiency available
q HEXFRED diodes optimized for performance with IGBTs;
Minimized recovery characteristics
q IGBTs optimized for specific application conditions; high input impedance
requires low gate drive power
q Low noise and interference
Absolute Maximum Ratings
SMD-10
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Thermal Resistance
Max.
600
100
50
400
400
50
400
± 20
350
140
-55 to + 150
Units
V
A
V
W
°C
Parameter
Min. Typ.
RθJC
RθJC
RθCS
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
——
——
— 0.59
— 6.0(0.21)
Notes: Repetitive rating: VGE = 20V; pulse width limited by
maximum junction temperature (figure 20)
VCC = 80%(VCES), VGE = 20V, L=10µH, RG= 5.0Ω
(figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
Max.
0.36
0.69
—
—
Units
°C/W
g (oz)
1 page  
IRG4ZC70UD
14000
12000
10000
8000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
6000
4000
Coes
2000
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCC = 400V
I C = 50A
16
12
8
4
0
0 100 200 300 400
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
500
8.0
VCC = 480V
VGE = 15V
TJ = 25 ° C
7.0 IC = 50A
100 RG = 5O.0hΩm
VGE = 15V
VCC = 480V
6.0
5.0
4.0
3.0
0
10 20 30 40
RG , Gate Resistance ( Ω )
50
Fig. 9 - Typical Switching Losses vs.
Gate Resistance
www.irf.com
10 IC = 100 A
IC = 50 A
IC = 25 A
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature °( C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4ZC70UD.PDF ] | |
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