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IRFM210A PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFM210A
部品説明 Advanced Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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IRFM210A Datasheet, IRFM210A PDF,ピン配置, 機能
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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
Low RDS(ON) : 1.169 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TA=25oC )
Continuous Drain Current (TA=70oC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
Repetitive Avalanche Energy
O1
O1
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC )*
Linear Derating Factor *
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
IRFM210A
BVDSS = 200 V
RDS(on) = 1.5
ID = 0.77 A
SOT-223
1
3
2
1. Gate 2. Drain 3. Source
Value
200
0.77
0.61
6
+_ 30
40
0.77
0.2
5.0
2
0.016
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJA
Characteristic
Junction-to-Ambient *
Typ.
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
61
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation

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