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PDF IRLS520A Data sheet ( Hoja de datos )
| Número de pieza | IRLS520A | |
| Descripción | Advanced Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
n Lower RDS(ON) : 0.176Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25℃)
Continuous Drain Current (TC=100℃)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
③
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds
IRLS520A
BVDSS = 100 V
RDS(on) = 0.22Ω
ID = 7.2 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
100
7.2
5
32
±20
103
7.2
3.0
6.5
30
0.2
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
5
62.5
Units
oC/W
Rev. A
1 page  
N-CHANNEL
POWER MOSFET
IRLS520A
Fig 12. Gate Charge Test Circuit & Waveform
* Current Regulator ”
50KΩ
12V 200nF
300nF
VGS
Same Type
as DUT
VGS
VDS
10V
Qgs
DUT
3mA
R1 R2
Current Sampling (IG) Current Sampling (ID)
Resistor
Resistor
Qg
Qgd
Charge
10V
Vout
Vin
RG
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDD
( 0.5 rated VDS )
Vout
90%
DUT
Vin 10%
td(on)
tr
t on
td(off)
tf
t off
Vary tp to obtain
required peak ID
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
LL
ID
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
RG
5V
tp
DUT
C
VDD
VDD
ID (t)
tp
VDS (t)
Time
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRLS520A.PDF ] | |
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