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IR1166SPbFのメーカーはInternational Rectifierです、この部品の機能は「SmartRectifier CONTROL IC」です。 |
部品番号 | IR1166SPbF |
| |
部品説明 | SmartRectifier CONTROL IC | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIR1166SPbFダウンロード(pdfファイル)リンクがあります。 Total 15 pages
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Data Sheet PD-97237
IR1166SPbF
SmartRectifierTM CONTROL IC
Features
Secondary side high speed SR controller
DCM, CrCM and CCM flyback topologies
200V proprietary IC technology
Max 500KHz switching frequency
Anti-bounce logic and UVLO protection
4A peak turn off drive current
Micropower start-up & ultra low quiescent current
10.7V gate drive clamp
50ns turn-off propagation delay
Vcc range from 11.3V to 20V
Direct sensing of MOSFET drain voltage
Minimal component count
Simple design
Lead-free
Compatible with 1W Standby, Energy Star, CECP, etc.
Description
Package
IR1166S is a smart secondary side driver IC designed to drive N-Channel power MOSFETs
used as synchronous rectifiers in isolated Flyback converters.
The IC can control one or more paralleled N-MOSFETs to emulate the behavior of Schottky
diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity
of the current and turn the power switch on and off in proximity of the zero current transi-
tion.
Ruggedness and noise immunity are accomplished using an advanced blanking scheme
and double-pulse suppression which allow reliable operation in continuous, discontinuous
8-Lead SOIC
and critical current mode operation and both fixed and variable frequency modes.
IR1166S Application Diagram
Vin
Rs
Cs
Ci
Rdc
XFM
U1
Cdc
1 VCC VGATE 8
2 OVT GND 7
3 MOT
VS 6
RMOT
4 EN
VD 5
IR1166S
Rg
Co
Rtn Q1
*Please note that this data sheet contains advanced information that could change before the product is released to production.
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IR1166S
Electrical Characteristics
The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and
junction temperature range TJ from 25° C to 125°C. Typical values represent the median values, which are
related to 25°C. If not otherwise stated, a supply voltage of VCC =15V is assumed for test condition.
Supply Section
Parameters
Symbol Min. Typ. Max. Units
Remarks
Supply Voltage Operating Range
VCC Turn On Threshold
VCC Turn Off Threshold
(Under Voltage Lock Out)
VCC
VCC ON
VCC UVLO
11.4
9.8
8.4
10.6
9
18
11.3
9.7
V
V
V
VCC Turn On/Off Hysteresis
Operating Current
Quiescent Current
Start-up Current
Sleep Current
Enable Voltage High
Enable Voltage Low
Enable Pull-up Resistance
Comparator Section
VCC HYST
ICC
IQCC
ICC START
ISLEEP
VENHI
VENLO
REN
1.4
1.57 1.7
8 10
47 65
1.7 2.2
92 200
145 200
2.71
1.6
1.5
V
mA
CLOAD=1nF, fsw = 400kHz
CLOAD=10nF, fsw = 400kHz
mA
µA VCC=VCC ON - 0.1V
µA VEN=0V, VCC =15V
V
V
MΩ GBD
Parameters
Symbol Min. Typ. Max. Units
Remarks
Turn-off Threshold
Turn-on Threshold
Hysteresis
Input Bias Current
Input Bias Current
Comparator Input Offset
Input CM Voltage Range
VTH1
VTH2
VHYST
IIBIAS1
IIBIAS2
VOFFSET
VCM
-7
-15
-23
-150
-0.15
-3
-10.3
-18.7
63
1
23
0
-7
-15
-50
7.5
100
2
2
OVT = 0V, VS=0V
mV OVT floating, VS=0V
OVT = VCC, VS=0V
mV
mV
µA VD = -50mV
µA VD = 200V
mV GBD
V
One-Shot Section
Parameters
Blanking pulse duration
Reset Threshold
Hysteresis
Symbol Min.
tBLANK
10
VTH3
VHYST3
Typ.
15
2.5
5.4
40
Max.
20
Units
µs
V
V
mV
Remarks
VCC=10V - GBD
VCC=20V - GBD
VCC=10V - GBD
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IR1166S
Detailed Pin Description
GND: Ground
This is ground potential pin of the integrated control
circuit. The internal devices and gate driver are
referenced to this point.
MOT: Minimum On Time
The MOT programming pin controls the amount of
minimum on time. Once VTH2 is crossed for the first
time, the gate signal will become active and turn on
the power FET. Spurious ringings and oscillations can
trigger the input comparator off. The MOT blanks the
input comparator keeping the FET on for a minimum
time.
The MOT is programmed between 200ns and 3us
(typ.) by using a resistor referenced to GND.
OVT: Offset Voltage Trimming
The OVT pin will program the amount of input offset
voltage for the turn-off threshold VTH1.
The pin can be optionally tied to ground, to VCC or
left floating, to select 3 ranges of input offset trimming.
This programming feature allows for accomodating
different RDSon MOSFETs.
GATE: Gate Drive Output
This is the gate drive output of the IC. Drive voltage
is internally limited and provides 2A peak source and
5A peak sink capability. Although this pin can be
directly connected to the power MOSFET gate, the
use of minimal gate resistor is recommended,
expecially when putting multiple FETs in parallel.
Care must be taken in order to keep the gate loop as
short and as small as possible in order to achieve
optimal switching performance.
kelvin contact as close as possible to the power
MOSFET source pin.
VD: Drain Voltage Sense
VD is the voltage sense pin for the power MOSFET
Drain. This is a high voltage pin and particular care
must be taken in properly routing the connection to
the power MOSFET drain.
Additional filtering and or current limiting on this pin is
not recommended as it would limit switching perfor-
mance of the IC.
VCC: Power Supply
This is the supply voltage pin of the IC and it is
monitored by the under voltage lockout circuit. It is
possible to turn off the IC by pulling this pin below the
minimum turn off threshold voltage, without damage
to the IC.
To prevent noise problems, a bypass ceramic
capacitor connected to Vcc and GND should be placed
as close as possible to the IR1166S.
This pin is internally clamped.
EN: Enable
This pin is used to activate the IC sleep mode by
pulling the voltage level below 2.5V (typ). In sleep
mode the IC will consume a minimum amount of cur-
rent. However all switching functions will be disabled
and the gate will be inactive.
VS: Source Voltage Sense
VS is the differential sense pin for the power MOSFET
Source. This pin must not be connected directly to
the power ground pin (7) but must be used to create a
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部品番号 | 部品説明 | メーカ |
IR1166SPbF | SmartRectifier CONTROL IC | International Rectifier |
IR1166SPBF | SmartRectifier Control IC | International Rectifier |