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PDF AOD466 Data sheet ( Hoja de datos )

Número de pieza AOD466
Descripción N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AOD466
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD466 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOD466 is Pb-free (meets ROHS & Sony
259 specifications). AOD466L is a Green Product
ordering option. AOD466 and AOD466L are
electrically identical.
TO-252
D-PAK
Features
VDS (V) = 25V
ID = 30A (VGS = 10V)
RDS(ON) < 14 m(VGS = 10V)
RDS(ON) < 24 m(VGS = 4.5V)
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy 0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
25
±20
30
25
70
20
20
30
15
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
3.6
Max
20
50
5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

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AOD466 pdf
AOD466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
30
tA
=
LID
BV VDD
25
20
15
10 TA=25°C
5
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
35
30
25
20
15
10
5
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
35
30
25
20
15
10
5
0
0
10
1
50
TA=25°C
40
30
20
10
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
0
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.

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