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AOD460 の電気的特性と機能

AOD460のメーカーはAlpha & Omega Semiconductorsです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 AOD460
部品説明 N-Channel Enhancement Mode Field Effect Transistor
メーカ Alpha & Omega Semiconductors
ロゴ Alpha & Omega Semiconductors ロゴ 




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AOD460 Datasheet, AOD460 PDF,ピン配置, 機能
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AOD460
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD460 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOD460 is Pb-free (meets ROHS & Sony
259 specifications). AOD460L is a Green Product
ordering option. AOD460 and AOD460L are
electrically identical.
TO-252
D-PAK
Features
VDS (V) = 25V
ID = 25 A (VGS = 10V)
RDS(ON) < 14 m(VGS = 10V)
RDS(ON) < 24 m(VGS = 4.5V)
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy 0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
25
±20
25
25
70
20
20
30
15
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
3.6
Max
20
50
5
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

1 Page





AOD460 pdf, ピン配列
AOD460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
10V
60
40
6V
4.5V
20
0
0
VGS=3V
1234
VDS (Volts)
Fig 1: On-Region Characteristics
5
40
VDS=5V
30
125°C
20
25°C
10
0
2 2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics
5
25
VGS=4.5V
20
1.6
VGS=10V, 20A
1.4
15
10 VGS=10V
5
0 5 10 15 20 25 30 35 40
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
VGS=4.5V,20A
1
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
35 ID=20A
30
25
125°C
20
15
25°C
10
2.00 4.00 6.00 8.00 10.00
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
125°C
25°C
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Alpha & Omega Semiconductor, Ltd.


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共有リンク

Link :


部品番号部品説明メーカ
AOD460

N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors
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