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PDF STP11NC40 Data sheet ( Hoja de datos )

Número de pieza STP11NC40
Descripción N-CHANNEL Power MOSFET
Fabricantes ST Microelectronics　
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STP11NC40 Hoja de datos, Descripción, Manual

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STP11NC40, STP11NC40FP
N-CHANNEL 400V - 0.44Ω - 9.5A TO-220/TO-220FP
PowerMESH™II Power MOSFET
TYPE
VDSS RDS(on)
ID
STP11NC40
400 V < 0.55 Ω 9.5 A
STP11NC40FP 400 V < 0.55 Ω 9.5 A(*)
s TYPICAL RDS(on) = 0.44 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
Pw
120 W
30 W
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ORDERING INFORMATION
SALES TYPE
MARKING
STP11NC40
P11NC40
STP11NC40FP
P11NC40FP
PACKAGE
TO-220
TO-220FP
January 2002
PACKAGING
TUBE
TUBE
1/10

1 page




STP11NC40 pdf
Gate Charge vs Gate-source Voltage
STP11NC40, STP11NC40FP
Capacitance Variations
NormalizedGateThresholdVoltagevsTemperature Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
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