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PDF IXTP05N100 Data sheet ( Hoja de datos )
| Número de pieza | IXTP05N100 | |
| Descripción | High Voltage MOSFET | |
| Fabricantes | IXYS Corporation | |
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High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTA 05N100
IXTP 05N100
VDSS
ID25
RDS(on)
= 1000 V
= 750 mA
= 17 Ω
Symbol
Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
IDM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
Md
Weight
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 47 Ω
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1000
1000
±30
±40
750
3
V
V
V
V
mA
A
1.0 A
5 mJ
100 mJ
3 V/ns
40 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
4g
300 °C
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 25 µA
1000
2.5
V
4.5 V
VGS = ±30 VDC, VDS = 0
±100 nA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
500 µA
VGS = 10 V, ID = 375 mA
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
15 17 Ω
TO-220AB (IXTP)
GDS
TO-263 AA (IXTA)
D (TAB)
G
S
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
y International standard packages
y High voltage, Low RDS (on) HDMOSTM
process
y Rugged polysilicon gate cell structure
y Fast switching times
Applications
y Switch-mode and resonant-mode
power supplies
y Flyback inverters
y DC choppers
y High frequency matching
Advantages
y Space savings
y High power density
© 2004 IXYS All rights reserved
DS98736B(10/04)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTP05N100.PDF ] | |
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