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IRFI9Z34NのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRFI9Z34N |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFI9Z34Nダウンロード(pdfファイル)リンクがあります。 Total 8 pages
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l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
G
PD - 9.1530A
IRFI9Z34N
HEXFET® Power MOSFET
D
VDSS = -55V
RDS(on) = 0.10Ω
S ID = -14A
TO-220 FULLPAK
Max.
-14
-10
- 68
37
0.24
± 20
180
-10
3.7
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
4.1
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97
1 Page 1 0 0 VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
10
IRFI9Z34N
100 VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
10
-4 .5V
20µs PULS E W IDTH
1
TTcJ == 2255°C
A
0.1 1
10 100
-VD S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
-4 .5V
20µs PULSE W IDTH
1
TTTJCJ==1711577°5C°CC
A
0.1 1 10 100
-VD S , Drain-to-Source V oltage (V )
Fig 2. Typical Output Characteristics
100
TJ = 2 5°C
TJ = 175°C
10
2.0
ID = -17A
1.5
1.0
V DS = -2 5 V
20µs PULSE W IDTH
1
4
5
6
7
8
9 10A
-VG S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
0.5
0.0
VGS = -10 V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3Pages IRFI9Z34N
VDS
L
RG
-20V
tp
D .U .T
IAS
0 .0 1Ω
D R IV E R
VD D
A
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
500
ID
TOP -4.2A
-7.2 A
400 BOTTOM -10A
300
200
100
0A
25 50 75 100 125 150 175
Starting TJ , Junction T emperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 Page | |||
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