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PDF IRF6645 Data sheet ( Hoja de datos )
| Número de pieza | IRF6645 | |
| Descripción | DirectFET Power MOSFET Typical calues | |
| Fabricantes | International Rectifier | |
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l RoHs Compliant Containing No Lead and Bromide
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques
PD - 97006
IRF6645
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
100V max ±20V max 28mΩ@ 10V
Qg tot
Qgd
Vgs(th)
14nC
4.8nC
4.0V
SJ DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH SJ SP
MZ MN
Description
The IRF6645 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6645 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
100 V
±20
5.7
4.5 A
25
45
29 mJ
3.4 A
80 12
70
ID = 3.4A
10 ID= 3.4A
VDS= 80V
VDS= 50V
60 8
TJ = 125°C
50 6
40 4
30
TJ = 25°C
2
20
4
6 8 10 12 14
VGS, Gate-to-Source Voltage (V)
16
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
0
0 4 8 12 16
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 5.0mH, RG = 25Ω, IAS = 3.4A.
1
8/5/05
1 page  
100.0
10.0
TJ = 150°C
TJ = 25°C
TJ = -40°C
IRF6645
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
1.0
VGS = 0V
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0.1 1.0
1msec
10msec
10.0
100.0 1000.0
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
6.0 6.0
5.5
5.0
5.0
4.0
4.5
3.0 4.0 ID = 1.0A
3.5 ID = 1.0mA
2.0 ID = 250µA
3.0 ID = 50µA
1.0
2.5
0.0
25 50 75 100 125 150
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Ambient Temperature (°C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
120
ID
100
TOP 1.5A
2.4A
BOTTOM 3.4A
80
60
40
20
www.irf.com
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6645.PDF ] | |
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