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PDF IXFH52N30Q Data sheet ( Hoja de datos )
| Número de pieza | IXFH52N30Q | |
| Descripción | (IXFx52N30Q) N-Channel Enhancement Mode Avalanche Rated | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Low Gate Charge and Capacitances
Preliminary data
IXFH 52N30Q
IXFK 52N30Q
IXFT 52N30Q
VDSS = 300 V
ID25 = 52 A
=RDS(on) 60 mW
trr £ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
IDM
I
AR
EAR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
Md
Weight
Symbol
V
DSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
T
C
= 25°C, Chip capability
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-264
TO-247
TO-264
TO-268
Maximum Ratings
300 V
300 V
±20 V
±30 V
52 A
208 A
52 A
30 mJ
1.5 J
5 V/ns
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
(TAB)
(TAB)
360 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6g
10 g
4g
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate
S = Source
TAB = Drain
Features
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 0 V, I = 1 mA
GS D
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
300
2
V
4V
±200 nA
50 mA
1 mA
60 mW
• Low gate charge
• International standard packages
• EpoxymeetUL94V-0, flammability
classification
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98522B (7/00)
1-2
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFH52N30Q.PDF ] | |
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