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PDF IXFN55N50 Data sheet ( Hoja de datos )
| Número de pieza | IXFN55N50 | |
| Descripción | (IXFx5xN50) HiPerFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFET
Single Die MOSFET
Preliminary data sheet
IXFN 55N50
IXFN 50N50
IXFK 55N50
IXFK 50N50
VDSS
500V
500V
500V
500V
ID25
RDS(on)
trr
55A 80mΩ 250ns
50A 100mΩ 250ns
55A 80mΩ 250ns
50A 100mΩ 250ns
Symbol
Test Conditions
IXFK
55N50
Maximum Ratings
IXFK
IXFN
50N50 55N50
IXFN
50N50
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
TJ = 25°C to 150°C
TJ = 25°C to 150°C
Continuous
Transient
500
500
±20
±30
500 V
500 V
±20 V
±30 V
TC = 25°C
TC =25°C,
TC = 25°C
55 50 55
220 200 220
55 50 55
TC = 25°C
60
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
TC = 25°C
560
-55 ... +150
150
-55 ... +150
50 A
200 A
50 A
60 mJ
5 V/ns
600 W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300
N/A
°C
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
N/A
N/A
0.9/6
N/A
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10 30 g
Symbol Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 1mA
500 V
VGS(th)
VDS = VGS, ID = 8mA
2.5 4.5 V
IGSS
IDSS
RDS(on)
VGS = ±20V; VDS = 0V
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25
Note 1
TJ = 25°C
TJ = 125°C
55N50
50N50
±200
25
2
80
100
nA
µA
mA
mΩ
mΩ
TO-264 AA (IXFK)
G
D
S
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
97502F (04/02)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFN55N50.PDF ] | |
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