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IRH7230 の電気的特性と機能

IRH7230のメーカーはInternational Rectifierです、この部品の機能は「RADIATION HARDENED POWER MOSFET THRU-HORE」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRH7230
部品説明 RADIATION HARDENED POWER MOSFET THRU-HORE
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRH7230 Datasheet, IRH7230 PDF,ピン配置, 機能
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PD - 91801B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AA/AE)
IRH7230
200V, N-CHANNEL
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRH7230
100K Rads (Si) 0.40
IRH3230
300K Rads (Si) 0.40
IRH4230
600K Rads (Si) 0.40
IRH8230
1000K Rads (Si) 0.40
ID
9.0A
9.0A
9.0A
9.0A
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-204AE
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Package
! Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
9.0
6.0 A
36
75 W
0.60
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy
330
Avalanche Current
9.0
Repetitive Avalanche Energy
7.5
Peak Diode Recovery dv/dt
5.0
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
11.5 (Typical )
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
8/9/01

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IRH7230 pdf, ピン配列
PRraed-iIartriaodniaCtihoanracteristics
IRH7230
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100 KRads(Si)
Min Max
300 - 1000K Rads (Si) Units
Min Max
Test Conditions
BVDSS
V/5JD
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source"
On-State Resistance (TO-3)
Static Drain-to-Source"
On-State Resistance (TO-204AE)
Diode Forward Voltage"
200
2.0
—
—
—
—
—
—
—
4.0
100
-100
25
0.40
0.40
1.6
200
1.25
—
—
—
—
—
4.5
100
-100
25
0.53
V
nA
µA
— 0.53
— 1.6 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=160V, VGS =0V
VGS = 12V, ID =6.0A
VGS = 12V, ID =6.0A
VGS = 0V, IS = 9.0A
1. Part numbers IRH7230,
2. Part number IRH3230, IRH4230, and IRH8230
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
Energy Range
MeV/(mg/cm )) (MeV)
(µm)
Cu 28
285 43
Br 36.8
305 39
VDS(V)
@VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V
190 180
170
125
—
100 100
100
50
—
200
150
100
50
0
0
-5 -10 -15 -20
VGS
Cu
Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRH7230 電子部品, 半導体
IRH7230
RadiationPPCorhseat--IrIrarrrcaatddeiiraistitoicns
Note: Bias Conditions during radiation: V/5 = 12 Vdc, V,5 = 0 Vdc
Fig 9. Typical Output Characteristics
Pre-Irradiation
Fig 10. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 11. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
6
Fig 12. Typical Output Characteristics
Post-Irradiation 1 Mega Rads (Si)
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部品番号部品説明メーカ
IRH7230

RADIATION HARDENED POWER MOSFET THRU-HORE

International Rectifier
International Rectifier


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