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FGA15N120ANTD の電気的特性と機能

FGA15N120ANTDのメーカーはFairchild Semiconductorです、この部品の機能は「1200V NPT Trench IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGA15N120ANTD
部品説明 1200V NPT Trench IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGA15N120ANTD Datasheet, FGA15N120ANTD PDF,ピン配置, 機能
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FGA15N120ANTD
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: VCE(sat), typ = 1.9V
@ IC = 15A and TC = 25°C
• Low switching loss: Eoff, typ = 0.6mJ
@ IC = 15A and TC = 25°C
• Extremely enhanced avalanche capability
May 2006
tm
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching appli-
cation such as induction heating, microwave oven, etc.
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current (Note 1)
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC
RθJC
RθJA
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
FGA15N120ANTD
1200
± 20
30
15
45
15
45
186
74
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.67
2.88
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGA15N120ANTD Rev. A
1
www.fairchildsemi.com

1 Page





FGA15N120ANTD pdf, ピン配列
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 15A
trr
Diode Reverse Recovery Time
IF = 15A
dI/dt = 200 A/μs
Irr Diode Peak Reverse Recovery Cur-
rent
Qrr Diode Reverse Recovery Charge
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.7
1.8
210
280
27
31
2835
4340
Max.
2.7
--
330
--
40
--
6600
--
Units
V
ns
A
nC
FGA15N120ANTD Rev. A
3
www.fairchildsemi.com


3Pages


FGA15N120ANTD 電子部品, 半導体
Typical Performance Characteristics (Continued)
Figure 13. Gate Charge Characteristics
15
Common Emitter
RL = 40Ω
12 TC = 25oC
600V
9 400V
6 Vcc = 200V
3
0
0 20 40 60 80 100 120
Gate Charge, Qg [nC]
Figure 14. SOA Characteristics
100 Ic M AX (Pulsed)
Ic M AX (Continuous)
10
DC O peration
1
50μs
100μs
1ms
Single N onrepetitive
0.1 Pulse Tc = 25oC
Curves m ust be derated
linearly with increase
0.01
in tem perature
0.1 1 10
100
C ollector - Em itter Voltage, VCE [V]
1000
Figure 15. Turn-Off SOA
100
10
Safe Operating Area
1 VGE = 15V, TC = 125oC
10 100 1000
Collector-Emitter Voltage, VCE [V]
Figure 16. Transient Thermal Impedance of IGBT
10
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1 10
FGA15N120ANTD Rev. A
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FGA15N120ANTD

1200V NPT Trench IGBT

Fairchild Semiconductor
Fairchild Semiconductor
FGA15N120ANTDTU

IGBT ( Insulated Gate Bipolar Transistor )

Fairchild Semiconductor
Fairchild Semiconductor


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