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PDF IRLR3802PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLR3802PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
l High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters
l Power Management for Netcom,
Computing and Portable Applications.
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
PD - 95089A
IRLR3802PbF
IRLU3802PbF
HEXFET® Power MOSFET
VDSS
12V
RDS(on) max
8.5mΩ
Qg
27nC
D-Pak
IRLR3802
I-Pak
IRLU3802
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
12
± 12
84
60
320
88
44
0.59
-55 to + 175
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Notes through are on page 9
www.irf.com
Typ.
–––
–––
–––
Max.
1.7
40
110
Units
°C/W
1
12/7/04
1 page  
100
LIMITED BY PACKAGE
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRLR/U3802PbF
VDS
LD
VDD
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tf
td(off) tr
Fig 10b. Switching Time Waveforms
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01 SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
0.1
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRLR3802PBF.PDF ] | |
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