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IRLR3410 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR3410
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLR3410 Datasheet, IRLR3410 PDF,ピン配置, 機能
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l Logic Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR3410)
l Straight Lead (IRLU3410)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current…
Repetitive Avalanche Energy…
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
G
PD - 91607B
IRLR/U3410
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 0.105
ID = 17A
S
D -P A K
T O -2 52 A A
I-P A K
TO -251AA
Max.
17
12
60
79
0.53
± 16
150
9.0
7.9
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
5/11/98

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