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IRLU3303 の電気的特性と機能

IRLU3303のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLU3303
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLU3303 Datasheet, IRLU3303 PDF,ピン配置, 機能
www.DataSheet4U.com
PD- 91316F
IRLR/U3303
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR3303)
l Straight Lead (IRLU3303)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
D
VDSS = 30V
RDS(on) = 0.031
ID = 35A…
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-Pak
T O -252 AA
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
35 …
25
140
68
0.45
± 16
130
20
6.8
5.0
-55 to + 175
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
–––
–––
–––
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Max.
2.2
50
110
I-Pak
T O -25 1AA
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
9/28/98

1 Page





IRLU3303 pdf, ピン配列
IRLR/U3303
1000
100
TO P
BOT TOM
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
10
1
0.1
0.1
2.5V
20µs PU LSE W ID TH
T J = 25°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
10
2.5V
1
0.1
0.1
20µs PULSE W IDTH
T J = 175°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
10
1
V DS= 15V
20µs PULSE W IDTH
0.1 A
2 3 4 5 6 7 8 9 10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
ID = 34A
1.5
1.0
0.5
0.0
VGS = 10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRLU3303 電子部品, 半導体
IRLR/U3303
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
300
ID
TOP 8.3A
14A
250 BOTTOM 20A
200
150
100
50
0 VDD = 15V
25 50
75
A
100 125 150 175
Starting TJ , Junction Tem perature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRLU3303

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
IRLU3303PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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