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IRLR3110ZPBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR3110ZPBF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLR3110ZPBF Datasheet, IRLR3110ZPBF PDF,ピン配置, 機能
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Industrial applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Industrial applications
and a wide variety of other applications.
G
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
ijRθJA Junction-to-Ambient (PCB mount)
jRθJA Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
PD - 97175B
IRLR3110ZPbF
IRLU3110ZPbF
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 14m
S
D-Pak
I-Pak
IRLR3110ZPbF IRLU3110ZPbF
Max.
63
45
42
250
140
0.95
±16
110
140
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
1.05
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
11/30/09

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