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PDF IRHF58034CM Data sheet ( Hoja de datos )
| Número de pieza | IRHF58034CM | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
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PD - 93825D
IRHY57034CM
RADIATION HARDENED
JANSR2N7483T3
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on)
IRHY57034CM 100K Rads (Si) 0.04Ω
IRHY53034CM 300K Rads (Si) 0.04Ω
IRHY54034CM 500K Rads (Si) 0.04Ω
IRHF58034CM 1000K Rads (Si) 0.048Ω
60V, N-CHANNEL
REF: MIL-PRF-19500/702
5 TECHNOLOGY
ID QPL Part Number
18A* JANSR2N7483T3
18A* JANSF2N7483T3
18A* JANSG2N7483T3
18A* JANSH2N7483T3
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
18*
18* A
72
75 W
0.6 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy Á
110
mJ
IAR Avalanche Current À
18 A
EAR
Repetitive Avalanche Energy À
7.5 mJ
dv/dt
Peak Diode Recovery dv/dt Â
10 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 (0.063in./1.6mm from case for 10sec)
oC
Weight
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/26/06
1 page  
Pre-Irradiation
IRHY57034CM, JANSR2N7483T3
2500
2000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1500
1000
500
0
1
Ciss
Coss
Crss
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 1282A
15
VDS = 48V
VDS = 30V
VDS = 12V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
1
TJ = 25° C
0.1
0.4
VGS = 0 V
0.6 0.8 1.0 1.2
VSD ,Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHF58034CM.PDF ] | |
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