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IRFSL3307 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL3307
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFSL3307 Datasheet, IRFSL3307 PDF,ピン配置, 機能
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
G
PD - 96901C
IRFB3307
IRFS3307
IRFSL3307
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
S ID
75V
5.0m:
6.3m:
130A
GDS
TO-220AB
IRFB3307
GDS
D2Pak
IRFS3307
GDS
TO-262
IRFSL3307
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
dContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
eEAS (Thermally limited) Single Pulse Avalanche Energy
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
kJunction-to-Case
RθCS
RθJA
RθJA
Case-to-Sink, Flat Greased Surface , TO-220
kJunction-to-Ambient, TO-220
jkJunction-to-Ambient (PCB Mount) , D2Pak
www.irf.com
Max.
™130
91™
510
250
1.6
± 20
11
-55 to + 175
300
x x10lb in (1.1N m)
270
See Fig. 14, 15, 16a, 16b
Typ.
–––
0.50
–––
–––
Max.
0.61
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
01/20/06

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