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IRFB3307のメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRFB3307 |
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部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB3307ダウンロード(pdfファイル)リンクがあります。 Total 11 pages
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
G
PD - 96901C
IRFB3307
IRFS3307
IRFSL3307
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
S ID
75V
5.0m:
6.3m:
130A
GDS
TO-220AB
IRFB3307
GDS
D2Pak
IRFS3307
GDS
TO-262
IRFSL3307
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
dContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
eEAS (Thermally limited) Single Pulse Avalanche Energy
ÃIAR Avalanche Current
gEAR Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
kJunction-to-Case
RθCS
RθJA
RθJA
Case-to-Sink, Flat Greased Surface , TO-220
kJunction-to-Ambient, TO-220
jkJunction-to-Ambient (PCB Mount) , D2Pak
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Max.
130
91
510
250
1.6
± 20
11
-55 to + 175
300
x x10lb in (1.1N m)
270
See Fig. 14, 15, 16a, 16b
Typ.
–––
0.50
–––
–––
Max.
0.61
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
01/20/06
1 Page 1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1
0.1
0.01
0.1
4.5V
≤60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
0.1
2
VDS = 25V
≤60µs PULSE WIDTH
4 6 8 10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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IRFB3307/IRFS3307/IRFSL3307
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
10 4.5V
1
0.1
≤60µs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
2.5
ID = 75A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
12.0
ID= 75A
10.0
VDS= 60V
VDS= 38V
8.0 VDS= 15V
6.0
4.0
2.0
0.0
0
20 40 60 80 100 120 140
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
3Pages IRFB3307/IRFS3307/IRFSL3307
5.0
4.5
4.0
3.5
3.0 ID = 150µA
ID = 250µA
2.5 ID = 1.0mA
ID = 1.0A
2.0
1.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
20
15
10
5 IF = 45A
VR = 64V
TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
20
15
10
5 IF = 30A
VR = 64V
TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 17 - Typical Recovery Current vs. dif/dt
400
350
300
250
200
150
100
50
IF = 30A
VR = 64V
TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 19 - Typical Stored Charge vs. dif/dt
400
350
300
250
200
150
100
50
IF = 45A
VR = 64V
TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com
6 Page | |||
ページ | 合計 : 11 ページ | ||
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