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IRFB3306PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFB3306PBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB3306PBFダウンロード(pdfファイル)リンクがあります。 Total 12 pages
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
D
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant, Halogen-Free
S
D
DS
G
TO-220AB
IRFB3306PbF
IRFB3306PbF
IRFS3306PbF
IRFSL3306PbF
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
60V
3.3m:
4.2m:
c160A
ID (Package Limited) 120A
D
D
DS
G
D2Pak
IRFS3306PbF
DS
G
TO-262
IRFSL3306PbF
G
Gate
D
D ra in
S
Source
Base Part Number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
IRFB3306PbF
IRFSL3306PbF
IRFS3306PbF
TO-220
TO-262
D2Pak
Tube
Tube
Tube
Tape and Reel Left
Tape and Reel Right
50
50
50
800
800
IRFB3306PbF
IRFSL3306PbF
IRFS3306PbF
IRFS3306TRLPbF
IRFS3306TRRPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
dContinuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
RθJA
Parameter
kJunction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
kJunction-to-Ambient, TO-220
jkJunction-to-Ambient (PCB Mount) , D2Pak
Max.
160
110
120
620
230
1.5
± 20
14
-55 to + 175
300
x x10lb in (1.1N m)
184
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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April 24, 2014
1 Page IRFB3306PbF/IRFS3306PbF/IRFSL3306PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.5V
10
0.1
≤ 60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.5V
10
0.1
≤ 60μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 75A
VGS = 10V
2.0
10
1
0.1
2.0
TJ = 25°C
VDS = 25V
≤ 60μs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
8000
6000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
20
ID= 75A
16
12
VDS= 48V
VDS= 30V
VDS= 12V
8
2000
Coss
Crss
0
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
0
0 20 40 60 80 100 120 140
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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April 24, 2014
3Pages IRFB3306PbF/IRFS3306PbF/IRFSL3306PbF
4.5
ID = 1.0A
4.0 ID = 1.0mA
ID = 250μA
3.5 ID = 150μA
3.0
2.5
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage Vs. Temperature
16
12
8
4
IF = 30A
VR = 51V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 17 - Typical Recovery Current vs. dif/dt
16 350
300
12
250
8
4
IF = 45A
VR = 51V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
350
200
150
100 IF = 30A
VR = 51V
50 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
300
250
200
150
100 IF = 45A
VR = 51V
50 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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April 24, 2014
6 Page | |||
ページ | 合計 : 12 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFB3306PBF | Power MOSFET ( Transistor ) | International Rectifier |