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PDF IXFA4N100Q Data sheet ( Hoja de datos )
| Número de pieza | IXFA4N100Q | |
| Descripción | (IXFA4N100Q / IXFP4N100Q) HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Preliminary Data Sheet
IXFA 4N100Q
IXFP 4N100Q
VDSS
ID25
RDS(on)
=1000 V
= 4A
= 3.0 W
trr £ 250 ns
Symbol
VDSS
VDGR
VGS
V
GSM
I
D25
I
DM
I
AR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
I
GSS
IDSS
R
DS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
T
C
= 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
1000
1000
V
V
±20 V
±30 V
4A
16 A
4A
20 mJ
700 mJ
5 V/ns
150 W
-55 to +150
150
-55 to +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
4g
2g
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 1.5 mA
1000
3.0
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = VDSS
V =0V
GS
TJ = 25°C
T
J
= 125°C
V = 10 V, I = 0.5 I
GS D D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
5.0 V
±100 nA
50 mA
1 mA
3.0 W
TO-220 (IXFP)
GDS
TO-263 (IXFA)
G
S
D (TAB)
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load
Switching (UIS)
• Molding epoxies meet UL 94V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98705 (02/04/00)
1-4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFA4N100Q.PDF ] | |
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