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AT12017-21 データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 AT12017-21
部品説明 SILICON ABRUPT VARACTOR DIODE
メーカ Advanced Semiconductor
ロゴ Advanced Semiconductor ロゴ 

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AT12017-21 Datasheet, AT12017-21 PDF,ピン配置, 機能
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AT12017-21
SILICON ABRUPT VARACTOR DIODE
DESCRIPTION:
The AT12017-21 is Designed for High
Performance RF and Microwave
Applications Requiring an Abrupt
Variable Capacitance Characteristic.
FEATURES INCLUDE:
High Tuning Ratio, CT = 9.5 MIN.
High Quality Factor, Q = 300 MIN.
Hermetic Package, CP = .20 pF
LS = .42 nH
PACKAGE STYLE 21
MAXIMUM RATINGS
IF 200 mA
VR
PDISS
TJ
TSTG
θJC
120 V
1.75W @ TC 25 OC
-55 OC to +150 OC
-55 OC to +150 OC
70 OC/W
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
VR IR = 10 µA
VF IF = 1 mA
IR VR = 100 V
NONE
MINIMUM TYPICAL MAXIM
120
1.0
100
CT
CT
Q
RS
VR = 4 V
CT0/ CT120
VR = 4 V
IF = 10 mA
f = 1.0 MHz
20
22
24
f = 1.0 MHz
9.0
f = 50 MHz
300
f = 2400 MHz
0.9
UNITS
V
V
µA
pF
---
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV.A
1/1

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