(PDF) AT12015-21 Datasheet - SILICON ABRUPT VARACTOR DIODE

Número de pieza	AT12015-21
Descripción	SILICON ABRUPT VARACTOR DIODE
Fabricantes	Advanced Semiconductor
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No Preview Available ! www.DataSheet4U.com AT12015-21 SILICON ABRUPT VARACTOR DIODE DESCRIPTION: The AT12015-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic. FEATURES INCLUDE: • High Tuning Ratio, ∆CT = 8.5 MIN. • High Quality Factor, Q = 300 MIN. • Hermetic Pkg, CP = .20 pF LS = .42 nH MAXIMUM RATINGS IF 200 mA VR PDISS TJ TSTG θJC 120 V 1.75W @ TC 25 OC -55 OC to +150 OC -55 OC to +150 OC 70 OC/W PACKAGE STYLE 21 NONE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS VR IR = 10 µA VF IF = 1 mA IR VR = 100 V MINIMUM TYPICAL MAXIMUM 120 1.0 100 UNITS V V nA CT ∆CT Q RS VR = 4 V CT0/ CT120 VR = 4 V IF = 10 mA f = 1.0 MHz 12 14 16 pF f = 1.0 MHz 8.5 --- f = 50 MHz 300 --- f = 2400 MHz 0.9 Ω A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF AT12015-21 Data sheet ( Hoja de datos )