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IRGB4062DPBF PDF Data sheet ( 特性 )

部品番号 IRGB4062DPBF
部品説明 (IRGB4062DPBF / IRGP4062DPBF) INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRGB4062DPBF Datasheet, IRGB4062DPBF PDF,ピン配置, 機能
IRGB4062DPbF
IRGP4062DPbF
IRGP4062D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
G
• 100% of the parts tested for ILM 
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
E
n-channel
• Tight parameter distribution
• Lead Free Package
C
VCES = 600V
IC = 24A, TC = 100°C
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.65V
CC
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
E
GC
TO-220AB
IRGB4062DPbF
G
Gate
E
GC
E
GC
TO-247AC
TO-247AD
IRGP4062DPbF IRGP4062D-EPbF
C
Collector
E
Emitter
Absolute Maximum Ratings
Pa ra m e te r
V CES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
IL M
IF @ TC = 25°C
IF @ TC = 100°C
IFM
V GE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
eDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TST G
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Pa ra m e te r
R JC (IGBT)
R JC (Diode)
R JC (IGBT)
R JC (Diode)
R CS
R JA
Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB
Thermal Resistance Junction-to-Case-(each Diode) TO-220AB
Thermal Resistance Junction-to-Case-(each IGBT) TO-247
Thermal Resistance Junction-to-Case-(each Diode) TO-247
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
48
24
72
96
48
24
96
±20
±30
250
125
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.50
80
Max.
0.60
1.53
0.65
1.62
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com © 2013 International Rectifier
July 17, 2013

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IRGB4062DPBF

(IRGB4062DPBF / IRGP4062DPBF) INSULATED GATE BIPOLAR TRANSISTOR

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