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FGPF7N60LSD の電気的特性と機能

FGPF7N60LSDのメーカーはFairchild Semiconductorです、この部品の機能は「Low Saturation IGBT CO-PAK」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGPF7N60LSD
部品説明 Low Saturation IGBT CO-PAK
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGPF7N60LSD Datasheet, FGPF7N60LSD PDF,ピン配置, 機能
www.DataSheet4U.com
January 2006
FGPF7N60LSD
600V, 7A Low Saturation IGBT CO-PAK
Features
• Low saturation voltage : VCE(sat) = 1.4 V @ IC = 7A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50 ns (typ.)
Applications
Lamp applications (Hallogen Dimmer)
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides
very low conduction and switching losses.The device is
designed for Lamp applications where very low On-Voltage
Drop is a required feature.
C
TO-220F
1.Gate 2.Collector 3.Emitter
G
E
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IF
I FM
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
PD Maximum Power Dissipation
@ TC = 25°C
Maximum Power Dissipation
@ TC = 100°C
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
RθJC (IGBT) Thermal Resistance, Junction-to-Case
RθJC(DIODE)
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
FGPF7N60LSD
600
± 20
14
7
21
12
60
45
18
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
2.8
4.5
62.5
©2006 Fairchild Semiconductor Corporation
FGPF7N60LSD Rev. A
1
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
www.fairchildsemi.com

1 Page





FGPF7N60LSD pdf, ピン配列
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 7A
TC = 25°C
TC = 100°C
trr Diode Reverse Recovery Time
TC = 25°C
TC = 100°C
Irr Diode Peak Reverse Recovery Current IF = 7A
TC = 25°C
dI/dt = 200 A/µs
TC = 100°C
Qrr Diode Reverse Recovery Charge
TC = 25°C
TC = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.65
1.58
50
58
2.5
3.3
62.5
95.7
Max.
2.1
--
65
--
3.75
--
122
--
Units
V
ns
A
nC
FGPF7N60LSD Rev. A
3
www.fairchildsemi.com


3Pages


FGPF7N60LSD 電子部品, 半導体
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
1000
Eoff
Eon
Figure 14. Gate Charge Characteristics
15
Common Emitter
RL = 43 ohm
TC = 25oC
200V
Vcc = 100V
10
300V
100
4
Common Emitter
VGE = +/-15V, RG = 470
TC = 25oC
TC = 125oC
8 12 16
Collector Current, IC [A]
Figure 15. SOA Characteristics
5
0
0 4 8 12 16 20 24
Gate Charge, Qg [nC]
100
Ic MAX (Pulsed)
10 Ic MAX (Continuous)
50µs
100µs
1ms
1
DC Operation
0.1 Single Nonrepetitive
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1 1
10
100
Collector - Emitter Voltage, VCE [V]
1000
Figure 16. Transient Thermal Impedance of IGBT
10
1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
1 E -5
single pulse
1 E -4
1 E -3
0.01
0 .1
R ectangular P ulse D uration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1 10
FGPF7N60LSD Rev. A
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FGPF7N60LSD

Low Saturation IGBT CO-PAK

Fairchild Semiconductor
Fairchild Semiconductor


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