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PDF IRHNJ597034 Data sheet ( Hoja de datos )
| Número de pieza | IRHNJ597034 | |
| Descripción | RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
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PD - 94608
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ597034 100K Rads (Si)
IRHNJ593034 300K Rads (Si)
RDS(on)
0.06Ω
0.06Ω
ID
-22A
-22A
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
IRHNJ597034
60V, P-CHANNEL
4# TECHNOLOGY
c
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
-22*
-16 A
-88
75 W
0.6 W/°C
±20 V
107 mJ
-22 A
7.5 mJ
-1.4 V/ns
-55 to 150
oC
300 ( for 5s )
1.0 ( Typical )
g
1
02/13/03
1 page  
Pre-Irradiation
IRHNJ597034
2500
2000
1500
1000
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
Coss
500
0
1
Crss
10
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
16
ID= -22A
12
VDS= -48V
VDS= -30V
VDS= -12V
8
4
0
0 5 10 15 20 25
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
30
100
TJ = 25°C
10
TJ = 150°C
1.0
0.5
VGS = 0V
1.5 2.5 3.5 4.5 5.5
-VSD , Source-to-Drain Voltage (V)
6.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
1ms
10ms
100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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| PDF Descargar | [ Datasheet IRHNJ597034.PDF ] | |
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